Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation

Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation

This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, P...

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Bibliographic Details
Main Authors: Tan, Gim Heng, Mohd Sidek, Roslina, Ramiah, Harikrishnan, Chong, Wei Keat, Lioe, De Xing
Format: Article
Language:English
Published: Hindawi Publishing Corporation 2014
Online Access:http://psasir.upm.edu.my/id/eprint/35910/1/Ultra-Low-Voltage%20CMOS-Based%20Current%20Bleeding%20Mixer%20with.pdf
Description
Summary:This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.

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