Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed...
Main Authors: | Wang, Yuda, Jackson, Howard E., Smith, Leigh M., Burgess, Tim, Paiman, Suriati, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati |
---|---|
Format: | Article |
Language: | English |
Published: |
American Chemical Society
2014
|
Online Access: | http://psasir.upm.edu.my/id/eprint/36709/1/Carrier%20thermalization%20dynamics%20in%20single%20zincblende%20and%20wurtzite%20InP%20nanowires.pdf |
Similar Items
-
Quantum confinement of excitons in wurtzite InP nanowires
by: Pemasiri, K, et al.
Published: (2015) -
Nonlinear optical processes in optically trapped InP nanowires
by: Wang, Fan, et al.
Published: (2011) -
Growth of InP nanowires on silicon using a thin buffer layer
by: Fonseka, H. Aruni, et al.
Published: (2012) -
MOCVD-grown indium phosphide nanowires for optoelectronics
by: Paiman, Suriati, et al.
Published: (2014) -
Effects of growth rate on InP nanowires morphology and crystal structure
by: Paiman, Suriati, et al.
Published: (2013)