Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to c...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Public Library of Science
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/37251/1/Effect%20of%20geometric%20parameters%20on%20the%20performance%20of%20p.pdf |
| _version_ | 1796973108622524416 |
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| author | Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Hamidon, Mohd Nizar Yeop Majlis, Burhanuddin |
| author_facet | Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Hamidon, Mohd Nizar Yeop Majlis, Burhanuddin |
| author_sort | Larki, Farhad |
| collection | UPM |
| description | This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed. |
| first_indexed | 2024-03-06T08:37:49Z |
| format | Article |
| id | upm.eprints-37251 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-03-06T08:37:49Z |
| publishDate | 2014 |
| publisher | Public Library of Science |
| record_format | dspace |
| spelling | upm.eprints-372512017-06-06T05:00:55Z http://psasir.upm.edu.my/id/eprint/37251/ Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Hamidon, Mohd Nizar Yeop Majlis, Burhanuddin This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed. Public Library of Science 2014-04 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37251/1/Effect%20of%20geometric%20parameters%20on%20the%20performance%20of%20p.pdf Larki, Farhad and Dehzangi, Arash and Md. Ali, Sawal Hamid and Jalar @ Jalil, Azman and Islam, Md. Shabiul and Hamidon, Mohd Nizar and Yeop Majlis, Burhanuddin (2014) Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors. PLOS ONE, 9 (4). art. no. e95182. pp. 1-9. ISSN 1932-6203 http://journals.plos.org/plosone/article?id=10.1371/journal.pone.0095182 10.1371/journal.pone.0095182 |
| spellingShingle | Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Hamidon, Mohd Nizar Yeop Majlis, Burhanuddin Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors |
| title | Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors |
| title_full | Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors |
| title_fullStr | Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors |
| title_full_unstemmed | Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors |
| title_short | Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors |
| title_sort | effect of geometric parameters on the performance of p type junctionless lateral gate transistors |
| url | http://psasir.upm.edu.my/id/eprint/37251/1/Effect%20of%20geometric%20parameters%20on%20the%20performance%20of%20p.pdf |
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