Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology

Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology

Generally there are two groups of devices in GaAs technology, which are active and passive devices. Passive devices commonly used in GaAs are resistor, capacitor, inductor and transmission lines. This research work only focus on MIM capacitor device. The aim of this research work is to design and de...

Bibliografske podrobnosti
Glavni avtor:	Sanusi, Rasidah
Format:	Thesis
Jezik:	English
Izdano:	2010
Teme:	Gallium arsenide Silicon nitride Capacitors - Design and construction
Online dostop:	http://psasir.upm.edu.my/id/eprint/41144/7/FK%202010%2079R.pdf

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