Ellipsometric study of Si1-x Gex alloy
A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were invest...
Main Authors: | Paiman, Suriati, Sakrani, Samsudi, Ismail, Bakar, Talib, Zainal Abidin |
---|---|
Format: | Article |
Language: | English |
Published: |
Malaysian Solid State Science and Technology Society
2003
|
Online Access: | http://psasir.upm.edu.my/id/eprint/42200/1/Ellipsometric%20study%20of%20Si1-x%20Gex%20alloy.pdf |
Similar Items
-
Reduction of dislocation mobility in GexSi1-x epilayers
by: Jurkschat, K, et al.
Published: (1996) -
Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
by: Setiawan, Y., et al.
Published: (2012) -
Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor
by: reyhaneh ejlali, et al.
Published: (2023-03-01) -
Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate
by: Setiawan, Y., et al.
Published: (2012) -
The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
by: Glasko, J, et al.
Published: (1997)