Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, howeve...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf |
| _version_ | 1796974783052644352 |
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| author | Hussein Baqiah, Hussein Abdullah Ibrahim, Noor Baa'yah Shaari, Abdul Halim Chen, Soo Kien Lim, Kean Pah Awang Kechik, Mohd Mustafa |
| author_facet | Hussein Baqiah, Hussein Abdullah Ibrahim, Noor Baa'yah Shaari, Abdul Halim Chen, Soo Kien Lim, Kean Pah Awang Kechik, Mohd Mustafa |
| author_sort | Hussein Baqiah, Hussein Abdullah |
| collection | UPM |
| description | The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, however when annealed in hydrogen at 600°C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500°C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300°C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×1019 cm−3, while film annealed at 500°C has both good electrical (ρ=0.05 Ω.cm and n=2.2×1019 cm−3) and magnetic properties, Ms=21 emu/cm-3. |
| first_indexed | 2024-03-06T09:02:00Z |
| format | Article |
| id | upm.eprints-47408 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-03-06T09:02:00Z |
| publishDate | 2016 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | upm.eprints-474082016-05-19T07:13:22Z http://psasir.upm.edu.my/id/eprint/47408/ Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature Hussein Baqiah, Hussein Abdullah Ibrahim, Noor Baa'yah Shaari, Abdul Halim Chen, Soo Kien Lim, Kean Pah Awang Kechik, Mohd Mustafa The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, however when annealed in hydrogen at 600°C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500°C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300°C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×1019 cm−3, while film annealed at 500°C has both good electrical (ρ=0.05 Ω.cm and n=2.2×1019 cm−3) and magnetic properties, Ms=21 emu/cm-3. Elsevier 2016 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf Hussein Baqiah, Hussein Abdullah and Ibrahim, Noor Baa'yah and Shaari, Abdul Halim and Chen, Soo Kien and Lim, Kean Pah and Awang Kechik, Mohd Mustafa (2016) Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature. Journal of Magnetism and Magnetic Materials, 401. pp. 102-107. ISSN 0304-8853; ESSN: 1873-4766 http://www.sciencedirect.com/science/article/pii/S0304885315306491 10.1016/j.jmmm.2015.10.013 |
| spellingShingle | Hussein Baqiah, Hussein Abdullah Ibrahim, Noor Baa'yah Shaari, Abdul Halim Chen, Soo Kien Lim, Kean Pah Awang Kechik, Mohd Mustafa Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature |
| title | Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature |
| title_full | Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature |
| title_fullStr | Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature |
| title_full_unstemmed | Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature |
| title_short | Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature |
| title_sort | physical properties of fe doped in2o3 magnetic semiconductor annealed in hydrogen at different temperature |
| url | http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf |
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