Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, howeve...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf |