Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition

Synthesis of hexagonal boron nitride (hBN) crystals with a controlled morphology is a major challenge due to various kinetic and thermodynamic factors at the edge. Supplying BN building blocks by heating precursor ammonia borane at a temperature of 90 °C produced triangular crystals, whereas, at hig...

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Main Authors: Sharma, Subash, Sharma, Kamal, Rosmi, Mohamad Saufi, Yaakob, Yazid, Ibrahim Araby, Mona, Ohtani, Hajime, Kalita, Golap, Tanemura, Masaki
Format: Article
Language:English
Published: American Chemical Society 2016
Online Access:http://psasir.upm.edu.my/id/eprint/53340/1/Morphology-controlled%20synthesis%20.pdf
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author Sharma, Subash
Sharma, Kamal
Rosmi, Mohamad Saufi
Yaakob, Yazid
Ibrahim Araby, Mona
Ohtani, Hajime
Kalita, Golap
Tanemura, Masaki
author_facet Sharma, Subash
Sharma, Kamal
Rosmi, Mohamad Saufi
Yaakob, Yazid
Ibrahim Araby, Mona
Ohtani, Hajime
Kalita, Golap
Tanemura, Masaki
author_sort Sharma, Subash
collection UPM
description Synthesis of hexagonal boron nitride (hBN) crystals with a controlled morphology is a major challenge due to various kinetic and thermodynamic factors at the edge. Supplying BN building blocks by heating precursor ammonia borane at a temperature of 90 °C produced triangular crystals, whereas, at higher heating (130 °C), hBN crystals with a hexagonal morphology were observed. The shape of crystals could also be modulated from hexagonal to triangular under a continuous reduced supply of BN building blocks. We attributed these phenomena to a different growth mechanism dependent on the concentration of BN radicals in the growth region. With a low supply of BN building blocks, crystal growth is the edge attachment limited, producing triangles, whereas, under higher concentration of BN building blocks, crystal growth is limited by diffusion producing hexagons. The presence of alternating B and N terminated vertices in hexagonal hBN crystals offers the possibility of hBN/graphene in-plane heterostructure synthesis with B–C and N–C bonding at the interface, which is not possible with N terminated triangular crystals. Supplying the controlled amount of BN building blocks to synthesize triangular and hexagonal crystals and modulation from hexagons to triangles is a major achievement (in the present work) due to single parameter control over the experiment.
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spelling upm.eprints-533402017-10-16T08:21:55Z http://psasir.upm.edu.my/id/eprint/53340/ Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition Sharma, Subash Sharma, Kamal Rosmi, Mohamad Saufi Yaakob, Yazid Ibrahim Araby, Mona Ohtani, Hajime Kalita, Golap Tanemura, Masaki Synthesis of hexagonal boron nitride (hBN) crystals with a controlled morphology is a major challenge due to various kinetic and thermodynamic factors at the edge. Supplying BN building blocks by heating precursor ammonia borane at a temperature of 90 °C produced triangular crystals, whereas, at higher heating (130 °C), hBN crystals with a hexagonal morphology were observed. The shape of crystals could also be modulated from hexagonal to triangular under a continuous reduced supply of BN building blocks. We attributed these phenomena to a different growth mechanism dependent on the concentration of BN radicals in the growth region. With a low supply of BN building blocks, crystal growth is the edge attachment limited, producing triangles, whereas, under higher concentration of BN building blocks, crystal growth is limited by diffusion producing hexagons. The presence of alternating B and N terminated vertices in hexagonal hBN crystals offers the possibility of hBN/graphene in-plane heterostructure synthesis with B–C and N–C bonding at the interface, which is not possible with N terminated triangular crystals. Supplying the controlled amount of BN building blocks to synthesize triangular and hexagonal crystals and modulation from hexagons to triangles is a major achievement (in the present work) due to single parameter control over the experiment. American Chemical Society 2016 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/53340/1/Morphology-controlled%20synthesis%20.pdf Sharma, Subash and Sharma, Kamal and Rosmi, Mohamad Saufi and Yaakob, Yazid and Ibrahim Araby, Mona and Ohtani, Hajime and Kalita, Golap and Tanemura, Masaki (2016) Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition. Crystal Growth & Design , 16 (11). pp. 6440-6445. ISSN 1528-7483; ESSN: 1528-7505 http://pubs.acs.org/doi/abs/10.1021/acs.cgd.6b01110 10.1021/acs.cgd.6b01110
spellingShingle Sharma, Subash
Sharma, Kamal
Rosmi, Mohamad Saufi
Yaakob, Yazid
Ibrahim Araby, Mona
Ohtani, Hajime
Kalita, Golap
Tanemura, Masaki
Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
title Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
title_full Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
title_fullStr Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
title_full_unstemmed Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
title_short Morphology-controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
title_sort morphology controlled synthesis of hexagonal boron nitride crystals by chemical vapor deposition
url http://psasir.upm.edu.my/id/eprint/53340/1/Morphology-controlled%20synthesis%20.pdf
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