Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the het...
Principais autores: | Delgado, N. Fernandez, Herrera, M., Chisholm, M. F., A. Kamarudin, M., Zhuang, Q. D., Hayne, M., Molina, S. I. |
---|---|
Formato: | Artigo |
Idioma: | English |
Publicado em: |
Springer New York
2016
|
Acesso em linha: | http://psasir.upm.edu.my/id/eprint/55166/1/Atomic-column%20scanning%20transmission%20electron%20microscopy%20analysis%20of%20misfit%20dislocations%20in%20GaSb%20GaAs%20quantum%20dots.pdf |
Registros relacionados
-
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
por: Fernández-Delgado, Natalia, et al.
Publicado em: (2017) -
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
por: Ahmad Kamarudin, Mazliana, et al.
Publicado em: (2011) -
Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
por: Hodgson, Peter D., et al.
Publicado em: (2013) -
Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots
por: T. Nowozin, et al.
Publicado em: (2013-01-01) -
Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells
por: Juanita Saroj James, et al.
Publicado em: (2024-07-01)