Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C
Silicon carbide (SiC) is regarded as a semi-conductor and thus characterized mainly for its electrical conductivity. However, SiC does exhibit significant electrical resistance at low ambient temperatures and represents a possible dielectric insulator. In this paper, the dielectric properties of the...
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| Format: | Article |
| Language: | English |
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Springer
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/55513/1/Dielectric%20behavior%20of%20b%20-SiC%20nanopowders%20in%20air%20between%2030%20and%20400%C2%B0%20C.pdf |
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| author | See, Alex Hassan, Jumiah Hashim, Mansor Abdul Wahab, Zaidan Abdul Halim, Dayang Nur Fazliana Abdullah, Mutia Suhaibah Azis, Raba’ah Syahidah |
| author_facet | See, Alex Hassan, Jumiah Hashim, Mansor Abdul Wahab, Zaidan Abdul Halim, Dayang Nur Fazliana Abdullah, Mutia Suhaibah Azis, Raba’ah Syahidah |
| author_sort | See, Alex |
| collection | UPM |
| description | Silicon carbide (SiC) is regarded as a semi-conductor and thus characterized mainly for its electrical conductivity. However, SiC does exhibit significant electrical resistance at low ambient temperatures and represents a possible dielectric insulator. In this paper, the dielectric properties of the b-SiC nanopowders were examined by X-ray diffraction and dielectric spectroscopy within the humid Malaysian environment. Research emphasis is placed on the stable dielectric behavior of the nanopowder itself as the nanopowder phase is susceptible to hydroxyloxidization as mentioned by the nanopowder manufacturer. The XRD results identified the presence of b-SiC peaks whereas EDX detected minor oxygen presence in the nanopowder. Dielectric permittivity response of the nanopowder pellet indicated stable Quasi-DC dielectric behavior from 30 to 400° C with minor increments of the initial relative dielectric permittivity at the lower temperatures. The relative dielectric permittivity of the SiC nanoparticles was determined to be 44 (30° C) to 31 (400° C) at 1MHz. Arrhenius plot of the dielectric data resulted in a two linear energy activation plots due to possible hopping mechanisms within the SiC nanoparticles covalent structure. Overall, the b-SiC nanopowder exhibited a stable Quasi-DC behavior at the measured temperatures. |
| first_indexed | 2024-03-06T09:23:38Z |
| format | Article |
| id | upm.eprints-55513 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-03-06T09:23:38Z |
| publishDate | 2016 |
| publisher | Springer |
| record_format | dspace |
| spelling | upm.eprints-555132017-09-13T03:35:54Z http://psasir.upm.edu.my/id/eprint/55513/ Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C See, Alex Hassan, Jumiah Hashim, Mansor Abdul Wahab, Zaidan Abdul Halim, Dayang Nur Fazliana Abdullah, Mutia Suhaibah Azis, Raba’ah Syahidah Silicon carbide (SiC) is regarded as a semi-conductor and thus characterized mainly for its electrical conductivity. However, SiC does exhibit significant electrical resistance at low ambient temperatures and represents a possible dielectric insulator. In this paper, the dielectric properties of the b-SiC nanopowders were examined by X-ray diffraction and dielectric spectroscopy within the humid Malaysian environment. Research emphasis is placed on the stable dielectric behavior of the nanopowder itself as the nanopowder phase is susceptible to hydroxyloxidization as mentioned by the nanopowder manufacturer. The XRD results identified the presence of b-SiC peaks whereas EDX detected minor oxygen presence in the nanopowder. Dielectric permittivity response of the nanopowder pellet indicated stable Quasi-DC dielectric behavior from 30 to 400° C with minor increments of the initial relative dielectric permittivity at the lower temperatures. The relative dielectric permittivity of the SiC nanoparticles was determined to be 44 (30° C) to 31 (400° C) at 1MHz. Arrhenius plot of the dielectric data resulted in a two linear energy activation plots due to possible hopping mechanisms within the SiC nanoparticles covalent structure. Overall, the b-SiC nanopowder exhibited a stable Quasi-DC behavior at the measured temperatures. Springer 2016 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/55513/1/Dielectric%20behavior%20of%20b%20-SiC%20nanopowders%20in%20air%20between%2030%20and%20400%C2%B0%20C.pdf See, Alex and Hassan, Jumiah and Hashim, Mansor and Abdul Wahab, Zaidan and Abdul Halim, Dayang Nur Fazliana and Abdullah, Mutia Suhaibah and Azis, Raba’ah Syahidah (2016) Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C. Journal of Materials Science: Materials in Electronics, 27 (7). pp. 6623-6629. ISSN 0957-4522; ESSN: 1573-482X https://link.springer.com/content/pdf/10.1007/s10854-016-4608-0.pdf 10.1007/s10854-016-4608-0 |
| spellingShingle | See, Alex Hassan, Jumiah Hashim, Mansor Abdul Wahab, Zaidan Abdul Halim, Dayang Nur Fazliana Abdullah, Mutia Suhaibah Azis, Raba’ah Syahidah Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C |
| title | Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C |
| title_full | Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C |
| title_fullStr | Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C |
| title_full_unstemmed | Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C |
| title_short | Dielectric behavior of b-SiC nanopowders in air between 30 and 400˚C |
| title_sort | dielectric behavior of b sic nanopowders in air between 30 and 400˚c |
| url | http://psasir.upm.edu.my/id/eprint/55513/1/Dielectric%20behavior%20of%20b%20-SiC%20nanopowders%20in%20air%20between%2030%20and%20400%C2%B0%20C.pdf |
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