Optical, Thermal and Carrier Transport Properties of Porous Silicon Layer Determined Using Photoacoustic Spectroscopy
In this study, porous silicon layers were fabricated on p-type and n-type silicon substrates by electrochemical etching method at five different current densities (i.e. 16.98, 22.64, 28.29, 33.96 and 39.62) mA/cm2. The etching duration was fixed at 20 minutes. In the second series of preparation, th...
| Autor principal: | |
|---|---|
| Formato: | Thesis |
| Idioma: | English English |
| Publicado em: |
2006
|
| Assuntos: | |
| Acesso em linha: | http://psasir.upm.edu.my/id/eprint/557/1/600402_fs_2006_42_abstrak_je__dh_pdf_.pdf |