Sneak path current tolerant resistive crossbar array structures based on self-rectifying memristor model for memory applications
The demands for continuous miniaturization of electronic devices and circuits have kept on increasing to fulfill consumer needs. However, today’s conventional technologies are facing major challenges related to scaling and design issues. Nanoscale memristive devices are one of the promising futur...
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| フォーマット: | 学位論文 |
| 言語: | English |
| 出版事項: |
2017
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| オンライン･アクセス: | http://psasir.upm.edu.my/id/eprint/67896/1/FK%202018%2029%20IR.pdf |