Sneak path current tolerant resistive crossbar array structures based on self-rectifying memristor model for memory applications

Sneak path current tolerant resistive crossbar array structures based on self-rectifying memristor model for memory applications

The demands for continuous miniaturization of electronic devices and circuits have kept on increasing to fulfill consumer needs. However, today’s conventional technologies are facing major challenges related to scaling and design issues. Nanoscale memristive devices are one of the promising futur...

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Dades bibliogràfiques
Autor principal:	Mahmood, Sinan Sabah
Format:	Thesis
Idioma:	English
Publicat:	2017
Matèries:	Memristors
Accés en línia:	http://psasir.upm.edu.my/id/eprint/67896/1/FK%202018%2029%20IR.pdf

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