Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM)...
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Format: | Conference or Workshop Item |
Language: | English |
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IEEE
2011
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Online Access: | http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf |
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author | Dehzangi, Arash Larki, Farhad Saion, Elias Hutagalung, Sabar D. Hamidon, Mohd Nizar Hassan, Jumiah |
author_facet | Dehzangi, Arash Larki, Farhad Saion, Elias Hutagalung, Sabar D. Hamidon, Mohd Nizar Hassan, Jumiah |
author_sort | Dehzangi, Arash |
collection | UPM |
description | The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one. |
first_indexed | 2024-03-06T09:57:54Z |
format | Conference or Workshop Item |
id | upm.eprints-68199 |
institution | Universiti Putra Malaysia |
language | English |
last_indexed | 2024-03-06T09:57:54Z |
publishDate | 2011 |
publisher | IEEE |
record_format | dspace |
spelling | upm.eprints-681992019-05-09T03:39:08Z http://psasir.upm.edu.my/id/eprint/68199/ Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography Dehzangi, Arash Larki, Farhad Saion, Elias Hutagalung, Sabar D. Hamidon, Mohd Nizar Hassan, Jumiah The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one. IEEE 2011 Conference or Workshop Item PeerReviewed text en http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf Dehzangi, Arash and Larki, Farhad and Saion, Elias and Hutagalung, Sabar D. and Hamidon, Mohd Nizar and Hassan, Jumiah (2011) Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography. In: 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2011), 28-30 Sept. 2011, Le Meridien Hotel, Kota Kinabalu, Sabah. (pp. 104-107). 10.1109/RSM.2011.6088302 |
spellingShingle | Dehzangi, Arash Larki, Farhad Saion, Elias Hutagalung, Sabar D. Hamidon, Mohd Nizar Hassan, Jumiah Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
title | Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
title_full | Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
title_fullStr | Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
title_full_unstemmed | Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
title_short | Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
title_sort | field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography |
url | http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf |
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