Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX....
Полное описание
Библиографические подробности
| Главные авторы: |
Mat Sharif, Khairul Anuar,
Zulkifli, Mohd Imran,
Muhamad Yassin, Shahrin Zen,
Tamchek, Nizam,
Aljamimi, Salah Mohammed,
Yusoff, A.,
Mohd Amin, Yusoff,
S. A., Siti Shafiqah,
Abdul Rashid, Hairul Azhar |
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| Формат: | Conference or Workshop Item
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| Язык: | English |
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| Опубликовано: |
IEEE
2013
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| Online-ссылка: | http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf
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