Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process
Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX....
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2013
|
| Online Access: | http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf |
| _version_ | 1825933668881793024 |
|---|---|
| author | Mat Sharif, Khairul Anuar Zulkifli, Mohd Imran Muhamad Yassin, Shahrin Zen Tamchek, Nizam Aljamimi, Salah Mohammed Yusoff, A. Mohd Amin, Yusoff S. A., Siti Shafiqah Abdul Rashid, Hairul Azhar |
| author_facet | Mat Sharif, Khairul Anuar Zulkifli, Mohd Imran Muhamad Yassin, Shahrin Zen Tamchek, Nizam Aljamimi, Salah Mohammed Yusoff, A. Mohd Amin, Yusoff S. A., Siti Shafiqah Abdul Rashid, Hairul Azhar |
| author_sort | Mat Sharif, Khairul Anuar |
| collection | UPM |
| description | Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica. |
| first_indexed | 2024-03-06T10:00:53Z |
| format | Conference or Workshop Item |
| id | upm.eprints-69175 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-03-06T10:00:53Z |
| publishDate | 2013 |
| publisher | IEEE |
| record_format | dspace |
| spelling | upm.eprints-691752019-06-12T07:36:27Z http://psasir.upm.edu.my/id/eprint/69175/ Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process Mat Sharif, Khairul Anuar Zulkifli, Mohd Imran Muhamad Yassin, Shahrin Zen Tamchek, Nizam Aljamimi, Salah Mohammed Yusoff, A. Mohd Amin, Yusoff S. A., Siti Shafiqah Abdul Rashid, Hairul Azhar Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica. IEEE 2013 Conference or Workshop Item PeerReviewed text en http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf Mat Sharif, Khairul Anuar and Zulkifli, Mohd Imran and Muhamad Yassin, Shahrin Zen and Tamchek, Nizam and Aljamimi, Salah Mohammed and Yusoff, A. and Mohd Amin, Yusoff and S. A., Siti Shafiqah and Abdul Rashid, Hairul Azhar (2013) Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process. In: 4th International Conference on Photonics (ICP2013), 28-30 Oct. 2013, Equatorial Hotel Melaka, Malaysia. (pp. 284-287). 10.1109/ICP.2013.6687140 |
| spellingShingle | Mat Sharif, Khairul Anuar Zulkifli, Mohd Imran Muhamad Yassin, Shahrin Zen Tamchek, Nizam Aljamimi, Salah Mohammed Yusoff, A. Mohd Amin, Yusoff S. A., Siti Shafiqah Abdul Rashid, Hairul Azhar Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process |
| title | Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process |
| title_full | Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process |
| title_fullStr | Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process |
| title_full_unstemmed | Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process |
| title_short | Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process |
| title_sort | effect of gecl4 sicl4 flow ratio on germanium incorporation in mcvd process |
| url | http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf |
| work_keys_str_mv | AT matsharifkhairulanuar effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT zulkiflimohdimran effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT muhamadyassinshahrinzen effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT tamcheknizam effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT aljamimisalahmohammed effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT yusoffa effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT mohdaminyusoff effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT sasitishafiqah effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess AT abdulrashidhairulazhar effectofgecl4sicl4flowratioongermaniumincorporationinmcvdprocess |