The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy (RF-MBE).
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
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| Online Access: | http://eprints.usm.my/14827/1/paper4.pdf |
| _version_ | 1825829514241900544 |
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| author | C, W Chin Hassan, Z. F, K Yam |
| author_facet | C, W Chin Hassan, Z. F, K Yam |
| author_sort | C, W Chin |
| collection | USM |
| description | In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy
(RF-MBE).
|
| first_indexed | 2024-03-06T14:09:45Z |
| format | Conference or Workshop Item |
| id | usm.eprints-14827 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:09:45Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | usm.eprints-148272013-07-13T05:44:57Z http://eprints.usm.my/14827/ The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. C, W Chin Hassan, Z. F, K Yam QC1 Physics (General) In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy (RF-MBE). 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14827/1/paper4.pdf C, W Chin and Hassan, Z. and F, K Yam (2007) The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
| spellingShingle | QC1 Physics (General) C, W Chin Hassan, Z. F, K Yam The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. |
| title | The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_full | The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_fullStr | The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_full_unstemmed | The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_short | The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_sort | growth of highly doped p gan on sapphire by rf plasma assisted molecular beam epitaxy |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/14827/1/paper4.pdf |
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