Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated t...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2007
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| Online Access: | http://eprints.usm.my/14829/1/paper5.pdf |
| _version_ | 1825829514638262272 |
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| author | L, S Chuah Hassan, Z. Abu Hassan, H |
| author_facet | L, S Chuah Hassan, Z. Abu Hassan, H |
| author_sort | L, S Chuah |
| collection | USM |
| description | The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.
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| first_indexed | 2024-03-06T14:09:46Z |
| format | Conference or Workshop Item |
| id | usm.eprints-14829 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:09:46Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | usm.eprints-148292013-07-13T05:44:59Z http://eprints.usm.my/14829/ Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. L, S Chuah Hassan, Z. Abu Hassan, H QC1 Physics (General) The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14829/1/paper5.pdf L, S Chuah and Hassan, Z. and Abu Hassan, H (2007) Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
| spellingShingle | QC1 Physics (General) L, S Chuah Hassan, Z. Abu Hassan, H Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. |
| title | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_full | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_fullStr | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_full_unstemmed | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_short | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_sort | optical characterization of gan thin film grown on si 111 by radio frequency plasma assisted molecular beam epitaxy |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/14829/1/paper5.pdf |
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