Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated t...

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Dettagli Bibliografici
Autori principali:	L, S Chuah, Hassan, Z., Abu Hassan, H
Natura:	Conference or Workshop Item
Lingua:	English
Pubblicazione:	2007
Soggetti:	QC1 Physics (General)
Accesso online:	http://eprints.usm.my/14829/1/paper5.pdf

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