Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.

Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.

In this paper, the Schottky behavior of Pt contact on n- GaN grown by RF-plasma assisted molecular beam epitaxy was investigated under different annealing temperatures.

Bibliographic Details
Main Authors:	C, W Chin, Hassan, Z, F, K Yam
Format:	Conference or Workshop Item
Language:	English
Published:	2007
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/14832/1/paper8.pdf

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