Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/14835/1/paper10.pdf |
| _version_ | 1797005390479622144 |
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| author | Thahab, S M Abu Hassan, H. Hassan, Z. |
| author_facet | Thahab, S M Abu Hassan, H. Hassan, Z. |
| author_sort | Thahab, S M |
| collection | USM |
| description | Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances. |
| first_indexed | 2024-03-06T14:09:47Z |
| format | Conference or Workshop Item |
| id | usm.eprints-14835 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:09:47Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | usm.eprints-148352013-07-13T05:45:05Z http://eprints.usm.my/14835/ Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. Thahab, S M Abu Hassan, H. Hassan, Z. QC1 Physics (General) Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14835/1/paper10.pdf Thahab, S M and Abu Hassan, H. and Hassan, Z. (2007) Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
| spellingShingle | QC1 Physics (General) Thahab, S M Abu Hassan, H. Hassan, Z. Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. |
| title | Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
|
| title_full | Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
|
| title_fullStr | Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
|
| title_full_unstemmed | Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
|
| title_short | Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
|
| title_sort | al0 15ga0 85n gan heterostructure field effect transistors hfet device structure optimization and thermal effects |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/14835/1/paper10.pdf |
| work_keys_str_mv | AT thahabsm al015ga085nganheterostructurefieldeffecttransistorshfetdevicestructureoptimizationandthermaleffects AT abuhassanh al015ga085nganheterostructurefieldeffecttransistorshfetdevicestructureoptimizationandthermaleffects AT hassanz al015ga085nganheterostructurefieldeffecttransistorshfetdevicestructureoptimizationandthermaleffects |