Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Thahab, S M, Abu Hassan, H., Hassan, Z.
Формат:	Conference or Workshop Item
Хэл сонгох:	English
Хэвлэсэн:	2007
Нөхцлүүд:	QC1 Physics (General)
Онлайн хандалт:	http://eprints.usm.my/14835/1/paper10.pdf

Ижил төстэй зүйлс

Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
-н: del Alamo, Jesus A., зэрэг
Хэвлэсэн: (2010)

Impact of 110 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
-н: Xia, Ling, зэрэг
Хэвлэсэн: (2012)

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs
-н: Danqiong Hou, зэрэг
Хэвлэсэн: (2012-01-01)

In GaN Double Heterostructure (DH) Laser Diode Performance And Optimization.
-н: Thahab, S M, зэрэг
Хэвлэсэн: (2007)

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N
-н: Niklas Wolff, зэрэг
Хэвлэсэн: (2024-05-01)

Effects of different synthesis methods on physical properties of La0.85K0.15MnO3
-н: Pan, Kai Yap
Хэвлэсэн: (2013)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
-н: Kyaw, Zabu, зэрэг
Хэвлэсэн: (2014)

Nanostructured GaN transistors
-н: Chowdhury, Nadim, зэрэг
Хэвлэсэн: (2019)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
-н: Duan, Tian Li, зэрэг
Хэвлэсэн: (2019)

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
-н: Ranjan, Kumud, зэрэг
Хэвлэсэн: (2015)

p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
-н: Xie, Qingyun
Хэвлэсэн: (2024)

Anisotropy of thermal expansion of 0.85 Na2 Cr04. 0.15 Na2 Co3 /
-н: 281457 Mehrotra, B. N.

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
-н: Lau, Sien Hui
Хэвлэсэн: (2020)

Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
-н: Ming-Hsien Wu, зэрэг
Хэвлэсэн: (2012-01-01)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
-н: Sun, Xiaowei, зэрэг
Хэвлэсэн: (2013)

A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs
-н: Yatexu Patel, зэрэг
Хэвлэсэн: (2024-01-01)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
-н: Zhang, Zi-Hui, зэрэг
Хэвлэсэн: (2013)

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
-н: Marino, Fabio Alessio, зэрэг
Хэвлэсэн: (2011)

Inelastic Neutron Scattering Studies on the Crystal Field Excitations in Superconducting NdFeAsO0.85F0.15
-н: Peng Cheng, зэрэг
Хэвлэсэн: (2015-01-01)

Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
-н: Wong, Yi Jing
Хэвлэсэн: (2022)

Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications
-н: Sung-Jae Chang, зэрэг
Хэвлэсэн: (2024-12-01)

Insights into the Early Size Effects of Lead‐Free Piezoelectric Ba0.85Ca0.15Zr0.1Ti0.9O3
-н: Harvey Amorín, зэрэг
Хэвлэсэн: (2024-02-01)

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics
-н: Liwei Jin, зэрэг
Хэвлэсэн: (2013-01-01)

Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
-н: Konrad Maier, зэрэг
Хэвлэсэн: (2019-06-01)

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
-н: Yanli Liu, зэрэг
Хэвлэсэн: (2018-01-01)

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
-н: Weiyi Jin, зэрэг
Хэвлэсэн: (2024-09-01)

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
-н: Mingyan Wang, зэрэг
Хэвлэсэн: (2024-01-01)

Fabrication of graphene-on-GaN vertical transistors
-н: Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology
Хэвлэсэн: (2015)

GaN transistors for efficient power conversion /
-н: Lidow, Alex, author, зэрэг
Хэвлэсэн: ([201)

GaN Transistors for Efficient Power Conversion /
-н: Lidow, Alex, author, зэрэг
Хэвлэсэн: (2020)

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
-н: Ruzzarin, M., зэрэг
Хэвлэсэн: (2019)

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
-н: Zuorong Nie, зэрэг
Хэвлэсэн: (2024-04-01)

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
-н: Jayanta Joglekar, Sameer
Хэвлэсэн: (2017)

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
-н: An-Chen Liu, зэрэг
Хэвлэсэн: (2024-04-01)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
-н: Whiteside, Matthew David
Хэвлэсэн: (2021)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
-н: A. D. Yunik, зэрэг
Хэвлэсэн: (2022-12-01)

Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
-н: Méchin, Loïc, зэрэг
Хэвлэсэн: (2024)

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
-н: Honghui Liu, зэрэг
Хэвлэсэн: (2022-01-01)

Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT)
-н: Seah, Alex Tian Long
Хэвлэсэн: (2018)

Effects of LiF on the structure and properties of Ba0.85Ca0.15Zr0.1Ti0.9O3lead-free piezoelectric ceramics
-н: Tan, Ivan Chee Kiang, зэрэг
Хэвлэсэн: (2013)