Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://eprints.usm.my/15537/1/FORMATION_OF_ZrO2_THIN_FILMS.pdf |
| _version_ | 1825829625548242944 |
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| author | Tedi, Kurniawan |
| author_facet | Tedi, Kurniawan |
| author_sort | Tedi, Kurniawan |
| collection | USM |
| description | Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba.
ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process.
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| first_indexed | 2024-03-06T14:11:24Z |
| format | Thesis |
| id | usm.eprints-15537 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:11:24Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | usm.eprints-155372017-05-15T08:05:02Z http://eprints.usm.my/15537/ Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. Tedi, Kurniawan TN1-997 Mining engineering. Metallurgy Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process. 2009-08 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/15537/1/FORMATION_OF_ZrO2_THIN_FILMS.pdf Tedi, Kurniawan (2009) Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | TN1-997 Mining engineering. Metallurgy Tedi, Kurniawan Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. |
| title | Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. |
| title_full | Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. |
| title_fullStr | Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. |
| title_full_unstemmed | Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. |
| title_short | Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. |
| title_sort | formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates tn1 997 |
| topic | TN1-997 Mining engineering. Metallurgy |
| url | http://eprints.usm.my/15537/1/FORMATION_OF_ZrO2_THIN_FILMS.pdf |
| work_keys_str_mv | AT tedikurniawan formationofzro2thinfilmsbythermaloxidationofsputteredzronsiandsicsubstratestn1997 |