PA-MBE GaN-Based Optoelectronics on Silicon Substrates
Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf |
| _version_ | 1825829637689704448 |
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| author | Chuah , Lee Siang |
| author_facet | Chuah , Lee Siang |
| author_sort | Chuah , Lee Siang |
| collection | USM |
| description | Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal.
In this project, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow GaN-based layers on Si(111) substrate using high temperature grown AlN as buffer layer.
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| first_indexed | 2024-03-06T14:11:34Z |
| format | Thesis |
| id | usm.eprints-15595 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:11:34Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | usm.eprints-155952020-01-16T07:23:20Z http://eprints.usm.my/15595/ PA-MBE GaN-Based Optoelectronics on Silicon Substrates Chuah , Lee Siang QC1 Physics (General) Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow GaN-based layers on Si(111) substrate using high temperature grown AlN as buffer layer. 2009 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf Chuah , Lee Siang (2009) PA-MBE GaN-Based Optoelectronics on Silicon Substrates. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Chuah , Lee Siang PA-MBE GaN-Based Optoelectronics on Silicon Substrates |
| title | PA-MBE GaN-Based Optoelectronics on Silicon Substrates |
| title_full | PA-MBE GaN-Based Optoelectronics on Silicon Substrates |
| title_fullStr | PA-MBE GaN-Based Optoelectronics on Silicon Substrates |
| title_full_unstemmed | PA-MBE GaN-Based Optoelectronics on Silicon Substrates |
| title_short | PA-MBE GaN-Based Optoelectronics on Silicon Substrates |
| title_sort | pa mbe gan based optoelectronics on silicon substrates |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf |
| work_keys_str_mv | AT chuahleesiang pambeganbasedoptoelectronicsonsiliconsubstrates |