PA-MBE GaN-Based Optoelectronics on Silicon Substrates

PA-MBE GaN-Based Optoelectronics on Silicon Substrates

Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio...

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Bibliographic Details
Main Author:	Chuah , Lee Siang
Format:	Thesis
Language:	English
Published:	2009
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf

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