Al-Ta2O5-GaN Semiconductor Device Structure
GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf |
| _version_ | 1825832137685729280 |
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| author | Yeoh, Lai Seng |
| author_facet | Yeoh, Lai Seng |
| author_sort | Yeoh, Lai Seng |
| collection | USM |
| description | GaN-based semiconductor devices have been extensively investigated for used in high
power and high temperature device applications in order to replace Si which is no longer capable
to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide
charge density, and high oxide capacitance would be necessary for device-quality GaN-based
MOS devices.
Peranti semikonduktor berasaskan GaN telah dikaji secara menyeluruh bagi penggunaan
dalam kuasa dan suhu tinggi bagi menggantikan Si yang tidak dapat lagi memenuhi keperluan
tersebut. Sifat seperti kebocoran arus yang rendah, ketumpatan cas oksida yang rendah, dan
kapasitan yang tinggi amat diperlukan untuk peranti MOS berasaskan GaN berkualiti tinggi. |
| first_indexed | 2024-03-06T14:48:21Z |
| format | Thesis |
| id | usm.eprints-28959 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T14:48:21Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | usm.eprints-289592019-04-12T05:26:02Z http://eprints.usm.my/28959/ Al-Ta2O5-GaN Semiconductor Device Structure Yeoh, Lai Seng QC1 Physics (General) GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and high oxide capacitance would be necessary for device-quality GaN-based MOS devices. Peranti semikonduktor berasaskan GaN telah dikaji secara menyeluruh bagi penggunaan dalam kuasa dan suhu tinggi bagi menggantikan Si yang tidak dapat lagi memenuhi keperluan tersebut. Sifat seperti kebocoran arus yang rendah, ketumpatan cas oksida yang rendah, dan kapasitan yang tinggi amat diperlukan untuk peranti MOS berasaskan GaN berkualiti tinggi. 2014 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf Yeoh, Lai Seng (2014) Al-Ta2O5-GaN Semiconductor Device Structure. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Yeoh, Lai Seng Al-Ta2O5-GaN Semiconductor Device Structure |
| title | Al-Ta2O5-GaN
Semiconductor Device Structure
|
| title_full | Al-Ta2O5-GaN
Semiconductor Device Structure
|
| title_fullStr | Al-Ta2O5-GaN
Semiconductor Device Structure
|
| title_full_unstemmed | Al-Ta2O5-GaN
Semiconductor Device Structure
|
| title_short | Al-Ta2O5-GaN
Semiconductor Device Structure
|
| title_sort | al ta2o5 gan semiconductor device structure |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf |
| work_keys_str_mv | AT yeohlaiseng alta2o5gansemiconductordevicestructure |