Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates

Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisio...

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Main Author: Fong, Chee Yong
Format: Thesis
Language:English
Published: 2016
Subjects:
Online Access:http://eprints.usm.my/31959/1/FONG_CHEE_YONG_24%28NN%29.pdf
_version_ 1797008735936184320
author Fong, Chee Yong
author_facet Fong, Chee Yong
author_sort Fong, Chee Yong
collection USM
description Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisional telah dibangunkan untuk mensintesis filem nipis GaN pada masa dahulu. Walau bagaimanapun, hanya terdapat beberapa kajian yang dilaporkan berkaitan dengan pertumbuhan filem nipis GaN dengan menggunakan kaedah salutan putaran sol-gel yang agak mudah dan lebih murah berbanding dengan kaedah yang dinyatakan sebelum ini. Oleh itu, objektif utama kajian ini adalah untuk menumbuhkan filem nipis GaN dengan kaedah salutan putaran sol-gel. Fasa awal projek ini melibatkan sintesis dan pencirian filem nipis GaN ditumbuh dengan menggunakan kaedah salutan putaran sol-gel tanpa diethanolamina (DEA). Gallium nitride (GaN) which has a direct band gap of 3.4 eV has become the focus of materials research. This is due to its unique combination of properties and technological importance for use in various applications such as optoelectronic devices and high power electronic devices. Various conventional methods have been developed to synthesize GaN thin films in the past few decades. However, there are only a few reported studies dealing with the growth of GaN thin films by using sol-gel spin coating method which is simpler and cheaper as compared to the conventional methods. Thus, the main objective of this work is to grow GaN thin films using sol-gel spin coating method. The initial phase of this work involved the synthesis and characterization of GaN thin films grown by using sol-gel spin coating method without diethanolamine (DEA).
first_indexed 2024-03-06T14:55:38Z
format Thesis
id usm.eprints-31959
institution Universiti Sains Malaysia
language English
last_indexed 2024-03-06T14:55:38Z
publishDate 2016
record_format dspace
spelling usm.eprints-319592019-04-12T05:25:22Z http://eprints.usm.my/31959/ Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates Fong, Chee Yong QC1 Physics (General) Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisional telah dibangunkan untuk mensintesis filem nipis GaN pada masa dahulu. Walau bagaimanapun, hanya terdapat beberapa kajian yang dilaporkan berkaitan dengan pertumbuhan filem nipis GaN dengan menggunakan kaedah salutan putaran sol-gel yang agak mudah dan lebih murah berbanding dengan kaedah yang dinyatakan sebelum ini. Oleh itu, objektif utama kajian ini adalah untuk menumbuhkan filem nipis GaN dengan kaedah salutan putaran sol-gel. Fasa awal projek ini melibatkan sintesis dan pencirian filem nipis GaN ditumbuh dengan menggunakan kaedah salutan putaran sol-gel tanpa diethanolamina (DEA). Gallium nitride (GaN) which has a direct band gap of 3.4 eV has become the focus of materials research. This is due to its unique combination of properties and technological importance for use in various applications such as optoelectronic devices and high power electronic devices. Various conventional methods have been developed to synthesize GaN thin films in the past few decades. However, there are only a few reported studies dealing with the growth of GaN thin films by using sol-gel spin coating method which is simpler and cheaper as compared to the conventional methods. Thus, the main objective of this work is to grow GaN thin films using sol-gel spin coating method. The initial phase of this work involved the synthesis and characterization of GaN thin films grown by using sol-gel spin coating method without diethanolamine (DEA). 2016-03 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/31959/1/FONG_CHEE_YONG_24%28NN%29.pdf Fong, Chee Yong (2016) Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates. PhD thesis, Universiti Sains Malaysia.
spellingShingle QC1 Physics (General)
Fong, Chee Yong
Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_full Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_fullStr Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_full_unstemmed Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_short Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_sort growth and characterizations of spin coated gallium nitride thin films on siliconsubstrates
topic QC1 Physics (General)
url http://eprints.usm.my/31959/1/FONG_CHEE_YONG_24%28NN%29.pdf
work_keys_str_mv AT fongcheeyong growthandcharacterizationsofspincoatedgalliumnitridethinfilmsonsiliconsubstrates