Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
Transparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on qua...
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| Format: | Monograph |
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Universiti Sains Malaysia
2017
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| _version_ | 1825833600396820480 |
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| author | Saw , Kim Guan |
| author_facet | Saw , Kim Guan |
| author_sort | Saw , Kim Guan |
| collection | USM |
| description | Transparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on quartz and Si substrates. |
| first_indexed | 2024-03-06T15:10:15Z |
| format | Monograph |
| id | usm.eprints-37128 |
| institution | Universiti Sains Malaysia |
| last_indexed | 2024-03-06T15:10:15Z |
| publishDate | 2017 |
| publisher | Universiti Sains Malaysia |
| record_format | dspace |
| spelling | usm.eprints-371282017-10-16T01:58:10Z http://eprints.usm.my/37128/ Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements. Saw , Kim Guan LC5800-5808 Distance education. Transparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on quartz and Si substrates. Universiti Sains Malaysia 2017 Monograph NonPeerReviewed Saw , Kim Guan (2017) Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements. Technical Report. Universiti Sains Malaysia. |
| spellingShingle | LC5800-5808 Distance education. Saw , Kim Guan Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements. |
| title | Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
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| title_full | Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
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| title_fullStr | Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
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| title_full_unstemmed | Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
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| title_short | Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
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| title_sort | fundamental analysis of semiconductor metal transition in indium doped zinc oxide using carrier concentration and current voltage measurements |
| topic | LC5800-5808 Distance education. |
| work_keys_str_mv | AT sawkimguan fundamentalanalysisofsemiconductormetaltransitioninindiumdopedzincoxideusingcarrierconcentrationandcurrentvoltagemeasurements |