Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands....
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf |
| _version_ | 1825834502099828736 |
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| author | Sarmast, Hadi Mahmodi Sheikh |
| author_facet | Sarmast, Hadi Mahmodi Sheikh |
| author_sort | Sarmast, Hadi Mahmodi Sheikh |
| collection | USM |
| description | In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time. |
| first_indexed | 2024-03-06T15:23:43Z |
| format | Thesis |
| id | usm.eprints-41822 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:23:43Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | usm.eprints-418222019-04-12T05:26:46Z http://eprints.usm.my/41822/ Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors Sarmast, Hadi Mahmodi Sheikh QC1 Physics (General) In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time. 2010-11 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf Sarmast, Hadi Mahmodi Sheikh (2010) Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Sarmast, Hadi Mahmodi Sheikh Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title | Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_full | Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_fullStr | Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_full_unstemmed | Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_short | Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors |
| title_sort | simulation and fabrication of ge islands on si metal semiconductor metal photodetectors |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf |
| work_keys_str_mv | AT sarmasthadimahmodisheikh simulationandfabricationofgeislandsonsimetalsemiconductormetalphotodetectors |