Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a p...
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| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf |
| _version_ | 1797010784254951424 |
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| author | Abidin, Noor Rehan Zainal |
| author_facet | Abidin, Noor Rehan Zainal |
| author_sort | Abidin, Noor Rehan Zainal |
| collection | USM |
| description | Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate. |
| first_indexed | 2024-03-06T15:24:49Z |
| format | Thesis |
| id | usm.eprints-42216 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:24:49Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | usm.eprints-422162019-04-12T05:26:39Z http://eprints.usm.my/42216/ Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film Abidin, Noor Rehan Zainal TN1-997 Mining engineering. Metallurgy Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate. 2011-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf Abidin, Noor Rehan Zainal (2011) Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | TN1-997 Mining engineering. Metallurgy Abidin, Noor Rehan Zainal Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title | Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_full | Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_fullStr | Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_full_unstemmed | Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_short | Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_sort | anodization of zirconium for the formation of high k dielectric zirconia zro2 thin film |
| topic | TN1-997 Mining engineering. Metallurgy |
| url | http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf |
| work_keys_str_mv | AT abidinnoorrehanzainal anodizationofzirconiumfortheformationofhighkdielectriczirconiazro2thinfilm |