Simulation Of Short Channel Vertical Mosfet Structures
Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done o...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf |
| _version_ | 1825834588266561536 |
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| author | Ooi , Poh Kok |
| author_facet | Ooi , Poh Kok |
| author_sort | Ooi , Poh Kok |
| collection | USM |
| description | Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost. |
| first_indexed | 2024-03-06T15:24:58Z |
| format | Thesis |
| id | usm.eprints-42269 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:24:58Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | usm.eprints-422692019-04-12T05:26:46Z http://eprints.usm.my/42269/ Simulation Of Short Channel Vertical Mosfet Structures Ooi , Poh Kok QC1 Physics (General) Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost. 2010-12 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf Ooi , Poh Kok (2010) Simulation Of Short Channel Vertical Mosfet Structures. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Ooi , Poh Kok Simulation Of Short Channel Vertical Mosfet Structures |
| title | Simulation Of Short Channel Vertical Mosfet Structures |
| title_full | Simulation Of Short Channel Vertical Mosfet Structures |
| title_fullStr | Simulation Of Short Channel Vertical Mosfet Structures |
| title_full_unstemmed | Simulation Of Short Channel Vertical Mosfet Structures |
| title_short | Simulation Of Short Channel Vertical Mosfet Structures |
| title_sort | simulation of short channel vertical mosfet structures |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf |
| work_keys_str_mv | AT ooipohkok simulationofshortchannelverticalmosfetstructures |