A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The ro...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | http://eprints.usm.my/42912/1/Cheah_Chun_Yee24.pdf |