Wet etching of GgAs for lateral PIN photodiode
Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the det...
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Format: | Book Section |
Language: | English |
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Penerbit Universiti Sains Malaysia
2004
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Online Access: | http://eprints.usm.my/43386/1/pME05.pdf |
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author | Ahmad, Mohd Hairul Faizal Shaari, Sahbudin |
author2 | Ahmad, Abdul Latif |
author_facet | Ahmad, Abdul Latif Ahmad, Mohd Hairul Faizal Shaari, Sahbudin |
author_sort | Ahmad, Mohd Hairul Faizal |
collection | USM |
description | Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the detector to be used in application that require higher bandwidth and long distance transmission. Therefore, the optical receiver for long-distance telecommunication has primarily been implemented in III-V materials like GaAs or InGaAs in order to achieve the highest possible performance. |
first_indexed | 2024-03-06T15:27:54Z |
format | Book Section |
id | usm.eprints-43386 |
institution | Universiti Sains Malaysia |
language | English |
last_indexed | 2024-03-06T15:27:54Z |
publishDate | 2004 |
publisher | Penerbit Universiti Sains Malaysia |
record_format | dspace |
spelling | usm.eprints-433862019-02-19T02:32:47Z http://eprints.usm.my/43386/ Wet etching of GgAs for lateral PIN photodiode Ahmad, Mohd Hairul Faizal Shaari, Sahbudin Q179.9-180 Research Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the detector to be used in application that require higher bandwidth and long distance transmission. Therefore, the optical receiver for long-distance telecommunication has primarily been implemented in III-V materials like GaAs or InGaAs in order to achieve the highest possible performance. Penerbit Universiti Sains Malaysia Ahmad, Abdul Latif Yahya, Ahad Rahim Mohd. Abdullah, Amirul AI-Ashraf Muhammad, Tengku Sifzizul Tengku 2004 Book Section PeerReviewed application/pdf en http://eprints.usm.my/43386/1/pME05.pdf Ahmad, Mohd Hairul Faizal and Shaari, Sahbudin (2004) Wet etching of GgAs for lateral PIN photodiode. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 456-458. |
spellingShingle | Q179.9-180 Research Ahmad, Mohd Hairul Faizal Shaari, Sahbudin Wet etching of GgAs for lateral PIN photodiode |
title | Wet etching of GgAs for lateral PIN photodiode |
title_full | Wet etching of GgAs for lateral PIN photodiode |
title_fullStr | Wet etching of GgAs for lateral PIN photodiode |
title_full_unstemmed | Wet etching of GgAs for lateral PIN photodiode |
title_short | Wet etching of GgAs for lateral PIN photodiode |
title_sort | wet etching of ggas for lateral pin photodiode |
topic | Q179.9-180 Research |
url | http://eprints.usm.my/43386/1/pME05.pdf |
work_keys_str_mv | AT ahmadmohdhairulfaizal wetetchingofggasforlateralpinphotodiode AT shaarisahbudin wetetchingofggasforlateralpinphotodiode |