Wet etching of GgAs for lateral PIN photodiode

Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the det...

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Bibliographic Details
Main Authors: Ahmad, Mohd Hairul Faizal, Shaari, Sahbudin
Other Authors: Ahmad, Abdul Latif
Format: Book Section
Language:English
Published: Penerbit Universiti Sains Malaysia 2004
Subjects:
Online Access:http://eprints.usm.my/43386/1/pME05.pdf
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author Ahmad, Mohd Hairul Faizal
Shaari, Sahbudin
author2 Ahmad, Abdul Latif
author_facet Ahmad, Abdul Latif
Ahmad, Mohd Hairul Faizal
Shaari, Sahbudin
author_sort Ahmad, Mohd Hairul Faizal
collection USM
description Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the detector to be used in application that require higher bandwidth and long distance transmission. Therefore, the optical receiver for long-distance telecommunication has primarily been implemented in III-V materials like GaAs or InGaAs in order to achieve the highest possible performance.
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spelling usm.eprints-433862019-02-19T02:32:47Z http://eprints.usm.my/43386/ Wet etching of GgAs for lateral PIN photodiode Ahmad, Mohd Hairul Faizal Shaari, Sahbudin Q179.9-180 Research Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the detector to be used in application that require higher bandwidth and long distance transmission. Therefore, the optical receiver for long-distance telecommunication has primarily been implemented in III-V materials like GaAs or InGaAs in order to achieve the highest possible performance. Penerbit Universiti Sains Malaysia Ahmad, Abdul Latif Yahya, Ahad Rahim Mohd. Abdullah, Amirul AI-Ashraf Muhammad, Tengku Sifzizul Tengku 2004 Book Section PeerReviewed application/pdf en http://eprints.usm.my/43386/1/pME05.pdf Ahmad, Mohd Hairul Faizal and Shaari, Sahbudin (2004) Wet etching of GgAs for lateral PIN photodiode. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 456-458.
spellingShingle Q179.9-180 Research
Ahmad, Mohd Hairul Faizal
Shaari, Sahbudin
Wet etching of GgAs for lateral PIN photodiode
title Wet etching of GgAs for lateral PIN photodiode
title_full Wet etching of GgAs for lateral PIN photodiode
title_fullStr Wet etching of GgAs for lateral PIN photodiode
title_full_unstemmed Wet etching of GgAs for lateral PIN photodiode
title_short Wet etching of GgAs for lateral PIN photodiode
title_sort wet etching of ggas for lateral pin photodiode
topic Q179.9-180 Research
url http://eprints.usm.my/43386/1/pME05.pdf
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