GaAs PHEMT single-ended mixers for 28 GHz applications
Mixers are key devices for front-end components in any transceiver of a communication system. The performance of a receiver rely heavily on the mixer operation in terms of its conversion loss (gain), noise figure, port-to-port isolation, intermodulation distortion and dynamic range. Microwave mixer...
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| Format: | Book Section |
| Language: | English |
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Penerbit Universiti Sains Malaysia
2004
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| Online Access: | http://eprints.usm.my/43401/1/pME07.pdf |
| _version_ | 1825834787015753728 |
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| author | Rahman, Nuriha Abd Majlis, Burhanuddin Yeop |
| author2 | Ahmad, Abdul Latif |
| author_facet | Ahmad, Abdul Latif Rahman, Nuriha Abd Majlis, Burhanuddin Yeop |
| author_sort | Rahman, Nuriha Abd |
| collection | USM |
| description | Mixers are key devices for front-end components in any transceiver of a communication system. The performance of a receiver rely heavily on the mixer operation in terms of its conversion loss (gain), noise figure, port-to-port isolation, intermodulation distortion and dynamic range. Microwave mixer can be designed by using Schottkybarrier diode or FET, either MESFET or HEMT. Using a FET rather than a diode as the non-linear element in a mixer has several advantages. Some of these include the possibility of achieving a conversion gain, using lower LO drive power and obtaining isolation between the signal ports of the FET |
| first_indexed | 2024-03-06T15:27:56Z |
| format | Book Section |
| id | usm.eprints-43401 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:27:56Z |
| publishDate | 2004 |
| publisher | Penerbit Universiti Sains Malaysia |
| record_format | dspace |
| spelling | usm.eprints-434012019-05-08T02:41:20Z http://eprints.usm.my/43401/ GaAs PHEMT single-ended mixers for 28 GHz applications Rahman, Nuriha Abd Majlis, Burhanuddin Yeop Q179.9-180 Research Mixers are key devices for front-end components in any transceiver of a communication system. The performance of a receiver rely heavily on the mixer operation in terms of its conversion loss (gain), noise figure, port-to-port isolation, intermodulation distortion and dynamic range. Microwave mixer can be designed by using Schottkybarrier diode or FET, either MESFET or HEMT. Using a FET rather than a diode as the non-linear element in a mixer has several advantages. Some of these include the possibility of achieving a conversion gain, using lower LO drive power and obtaining isolation between the signal ports of the FET Penerbit Universiti Sains Malaysia Ahmad, Abdul Latif Yahya, Ahmad Rahim Mohd. Abdullah, Amirul AI-Ashraf Muhammad, Tengku Sifzizul Tengku 2004 Book Section PeerReviewed application/pdf en http://eprints.usm.my/43401/1/pME07.pdf Rahman, Nuriha Abd and Majlis, Burhanuddin Yeop (2004) GaAs PHEMT single-ended mixers for 28 GHz applications. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 462-465. |
| spellingShingle | Q179.9-180 Research Rahman, Nuriha Abd Majlis, Burhanuddin Yeop GaAs PHEMT single-ended mixers for 28 GHz applications |
| title | GaAs PHEMT single-ended mixers for 28 GHz applications |
| title_full | GaAs PHEMT single-ended mixers for 28 GHz applications |
| title_fullStr | GaAs PHEMT single-ended mixers for 28 GHz applications |
| title_full_unstemmed | GaAs PHEMT single-ended mixers for 28 GHz applications |
| title_short | GaAs PHEMT single-ended mixers for 28 GHz applications |
| title_sort | gaas phemt single ended mixers for 28 ghz applications |
| topic | Q179.9-180 Research |
| url | http://eprints.usm.my/43401/1/pME07.pdf |
| work_keys_str_mv | AT rahmannurihaabd gaasphemtsingleendedmixersfor28ghzapplications AT majlisburhanuddinyeop gaasphemtsingleendedmixersfor28ghzapplications |