The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
Zinc Oxide (ZnO) is an attractive semiconductor for various applications due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Thus, realization of reproducible and good p-type ZnO is important for the formation of homo p-n junction in electronic and opto-electronic dev...
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| Format: | Thesis |
| Language: | English |
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2013
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| Online Access: | http://eprints.usm.my/43780/1/Low%20Lynn%20Yien24.pdf |