Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Heterostructure solar cell involving GaN low Dimensional (low D) structures on single crystalline silicon (Si) substrates are the preferable choice as they...
Main Author: | Abdelrahman, Kamaleldin Mohamed Abdalla |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | http://eprints.usm.my/46120/1/Kamaleldin%20Mohamed%20Abdalla%20Abdelrahman24.pdf |
Similar Items
-
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
by: Y, C.Lee, et al.
Published: (2000) -
Characterization Of Gan Nanowies Grown By Thermal Evaporation On Different Substrates And The Study Of Their Capability As A Solar Cell
by: Shekari, Leila
Published: (2013) -
Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)
by: Chong, S.K., et al.
Published: (2011) -
Effect of plasma power and flow rate of silane gas on diameter of silicon nanowires grown by plasma enhanced chemical vapor deposition
by: Hamidinezhad, Habib, et al.
Published: (2011) -
VHF-PECVD grown silicon nanoneedles: role of substrate temperature
by: Mohammed, Y.H., et al.
Published: (2016)