Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Heterostructure solar cell involving GaN low Dimensional (low D) structures on single crystalline silicon (Si) substrates are the preferable choice as they...
Main Author: | Abdelrahman, Kamaleldin Mohamed Abdalla |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | http://eprints.usm.my/46120/1/Kamaleldin%20Mohamed%20Abdalla%20Abdelrahman24.pdf |
Similar Items
-
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
by: Y, C.Lee, et al.
Published: (2000) -
Characterization Of Gan Nanowies Grown By Thermal Evaporation On Different Substrates And The Study Of Their Capability As A Solar Cell
by: Shekari, Leila
Published: (2013) -
Low temperature heteroepitaxial growth of 3C-SiC on silicon substrates by triode plasma chemical vapor deposition using dimethylsilane
by: Hashim, Abdul Manaf, et al.
Published: (2008) -
PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009) -
Effect of surface pretreatments on the deposition of polycrystalline diamond on silicon nitride substrates using hot filament chemical vapor deposition method
by: Dayangku Noorfazidah, Awang Sh'ri
Published: (2009)