Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering
In this work, p-type cuprous oxide (Cu20) thin films were deposited on n-type gallium nitride (GaN) by radio frequency (RF) magnetron sputtering. The target used for deposition Cu20 films was 3 inch diameter solid copper target with purity of 99.99%. The reactive sputtering was performed in a mixtu...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48736/1/Section%20C%20158.pdf%20cut.pdf |
| _version_ | 1797012033963556864 |
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| author | Ooi, P. K. Ng, S. S. Abdullah, M. J. |
| author_facet | Ooi, P. K. Ng, S. S. Abdullah, M. J. |
| author_sort | Ooi, P. K. |
| collection | USM |
| description | In this work, p-type cuprous oxide (Cu20) thin films were deposited on n-type gallium nitride (GaN) by radio frequency (RF) magnetron sputtering. The target used for deposition Cu20 films was 3 inch
diameter solid copper target with purity of 99.99%. The reactive sputtering was performed in a mixture
of argon (Ar) and oxygen (02) gasses. The Ar flow rate was fixed at 16 seem and the 0 2 flow rate was
varied from 2 to 4 seem. The RF power and the deposition period was 200 W and 60 min, respectively.
Structural and electrical properties of the Cu20/GaN heterojunction were studied. The X-ray diffraction
results showed that the Cu20 films were single phase polycrystalline with cubic structure. The surface
morphologies and film thicknesses were obtained from field emission scanning electron microscope.
For the electrical part, ohmic metal contact on Cu20 and GaN thin films were formed using silver and
aluminium, respectively. The type of conductivity, resistivity, carrier concentration and Hall mobility
were determined by Hall Effect system based on the Van der Pauw technique. The Cu20/GaN
heterojunction current-voltage (1-V) characteristics were examined using Keithley 4200-SCS
semiconductor characterization system. Parameters such as threshold voltage and ideality factor from
the 1-V curves will be extracted. |
| first_indexed | 2024-03-06T15:42:43Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48736 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:42:43Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | usm.eprints-487362021-03-31T06:30:45Z http://eprints.usm.my/48736/ Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering Ooi, P. K. Ng, S. S. Abdullah, M. J. QC1-999 Physics In this work, p-type cuprous oxide (Cu20) thin films were deposited on n-type gallium nitride (GaN) by radio frequency (RF) magnetron sputtering. The target used for deposition Cu20 films was 3 inch diameter solid copper target with purity of 99.99%. The reactive sputtering was performed in a mixture of argon (Ar) and oxygen (02) gasses. The Ar flow rate was fixed at 16 seem and the 0 2 flow rate was varied from 2 to 4 seem. The RF power and the deposition period was 200 W and 60 min, respectively. Structural and electrical properties of the Cu20/GaN heterojunction were studied. The X-ray diffraction results showed that the Cu20 films were single phase polycrystalline with cubic structure. The surface morphologies and film thicknesses were obtained from field emission scanning electron microscope. For the electrical part, ohmic metal contact on Cu20 and GaN thin films were formed using silver and aluminium, respectively. The type of conductivity, resistivity, carrier concentration and Hall mobility were determined by Hall Effect system based on the Van der Pauw technique. The Cu20/GaN heterojunction current-voltage (1-V) characteristics were examined using Keithley 4200-SCS semiconductor characterization system. Parameters such as threshold voltage and ideality factor from the 1-V curves will be extracted. 2015-06-09 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48736/1/Section%20C%20158.pdf%20cut.pdf Ooi, P. K. and Ng, S. S. and Abdullah, M. J. (2015) Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). |
| spellingShingle | QC1-999 Physics Ooi, P. K. Ng, S. S. Abdullah, M. J. Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering |
| title | Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering |
| title_full | Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering |
| title_fullStr | Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering |
| title_full_unstemmed | Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering |
| title_short | Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering |
| title_sort | characteristics of p cu20 n gan heterojunction prepared via reactive radio frequency magnetron sputtering |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48736/1/Section%20C%20158.pdf%20cut.pdf |
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