Optical Investigations on In0.11Ga0.89N based LEDs Grown on Si (111) Substrate with Different Superlattices Stack Layer Structure
Growing lnxGa1-xN based LEOs on Si is considered challenging as the large lattice mismatch between nitrides and Si material would lead to cracks and defects in the nitride layers. This reduces the luminescence efficiency of the devices. Therefore, in this work, we investigate the effect of the in...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48771/1/Section%20C%20163.pdf%20cut.pdf |