Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection
Overall , this work evaluates the role of different metal contacts in improving electrical properties of GaN MSM (metal-semiconductor-metal) photodetector. The metal contacts were investigated in this work are AI , In, Pt. ITO and ZnO. Prior to the metalization , GaN layer was deposited on m-plane s...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48790/1/NZ2.pdf%20done.pdf |
| _version_ | 1797012049922883584 |
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| author | Ariff, F. A. Zainal, N. Hassan, Z. |
| author_facet | Ariff, F. A. Zainal, N. Hassan, Z. |
| author_sort | Ariff, F. A. |
| collection | USM |
| description | Overall , this work evaluates the role of different metal contacts in improving electrical properties of GaN MSM (metal-semiconductor-metal) photodetector. The metal contacts were investigated in this work are AI , In, Pt. ITO and ZnO. Prior to the metalization , GaN layer was deposited on m-plane sapphire (AI203) substrate using electron beam (e-beam) evaporator, followed by ammonia annealing treatment to improve 111 -V stoichiometric balance. Subsequently , a metal mask consisting of two terminals, each with 3 inter-digitized fingers was aligned over -9 mm2 of the GaN samples. Contacts on each MSM photodetector were deposited by either RF/DC sputtering. Next each GaN MSM photodetector were annealed at 400 °C for 10 minutes in ambient air to diffuse the metal contact layer into th e GaN layer. The bes t spectral response of th e GaN MSM was observed at -360 nm GaN MSM photodetector with Pt contact shows a Schottky IV curve due to the large contact work -function . On the other hand. ohmic IV curve was observed on the remain ing GaN MSM photodetector IV measurement under dark and illuminated conditions shows a gain of -34 times between bias voltage or 1.5 V to 5.0 V. Responsivity measurement under pulsing UV light illumination was conducted to investigate the rise and fall time for each GaN MSM photodetector. |
| first_indexed | 2024-03-06T15:42:53Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48790 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:42:53Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | usm.eprints-487902021-04-06T02:46:05Z http://eprints.usm.my/48790/ Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection Ariff, F. A. Zainal, N. Hassan, Z. QC1-999 Physics Overall , this work evaluates the role of different metal contacts in improving electrical properties of GaN MSM (metal-semiconductor-metal) photodetector. The metal contacts were investigated in this work are AI , In, Pt. ITO and ZnO. Prior to the metalization , GaN layer was deposited on m-plane sapphire (AI203) substrate using electron beam (e-beam) evaporator, followed by ammonia annealing treatment to improve 111 -V stoichiometric balance. Subsequently , a metal mask consisting of two terminals, each with 3 inter-digitized fingers was aligned over -9 mm2 of the GaN samples. Contacts on each MSM photodetector were deposited by either RF/DC sputtering. Next each GaN MSM photodetector were annealed at 400 °C for 10 minutes in ambient air to diffuse the metal contact layer into th e GaN layer. The bes t spectral response of th e GaN MSM was observed at -360 nm GaN MSM photodetector with Pt contact shows a Schottky IV curve due to the large contact work -function . On the other hand. ohmic IV curve was observed on the remain ing GaN MSM photodetector IV measurement under dark and illuminated conditions shows a gain of -34 times between bias voltage or 1.5 V to 5.0 V. Responsivity measurement under pulsing UV light illumination was conducted to investigate the rise and fall time for each GaN MSM photodetector. 2016-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48790/1/NZ2.pdf%20done.pdf Ariff, F. A. and Zainal, N. and Hassan, Z. (2016) Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016). |
| spellingShingle | QC1-999 Physics Ariff, F. A. Zainal, N. Hassan, Z. Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection |
| title | Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection |
| title_full | Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection |
| title_fullStr | Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection |
| title_full_unstemmed | Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection |
| title_short | Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection |
| title_sort | improvement in opto electrical properties of gan msm photodetector by contact work function selection |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48790/1/NZ2.pdf%20done.pdf |
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