Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering
Zinc oxide (ZnO) is a wide band gap semiconductor (3.3 7ev) with promising appli cations in optoelectroni c devices and flat panel display. Copper (Cu) doping changes the properti es of ZnO. Pure and Cu doped ZnO (CZO) were deposited on p-type and 11-type ga llium nitride (GaN) using radio fi·equenc...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Online Access: | http://eprints.usm.my/48797/1/ZO5.pdf%20done.pdf |
| _version_ | 1797012051321683968 |
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| author | Yusof, Ahmad Sauffi Hassan, Zainuriah Zainal, Norzaini |
| author_facet | Yusof, Ahmad Sauffi Hassan, Zainuriah Zainal, Norzaini |
| author_sort | Yusof, Ahmad Sauffi |
| collection | USM |
| description | Zinc oxide (ZnO) is a wide band gap semiconductor (3.3 7ev) with promising appli cations in optoelectroni c devices and flat panel display. Copper (Cu) doping changes the properti es of ZnO. Pure and Cu doped ZnO (CZO) were deposited on p-type and 11-type ga llium nitride (GaN) using radio fi·equency (RF) magnetron sputtering of Cu!ZnO alloy target with ratio I 0/90 at room temperature. The effect of different deposition thickness of the thin film on the crysta l structure, surface morphology and surface roughnesswere investigated intensively using X-ray diffraction (XRD), field em ission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) andatomic force microscopy (AFM)respectively. Results indicate th at the films with hexago nal wurtzite structure and preferential c ax is orientation were fabricated. Crystalli zation of thin film is dependent on the deposition thickness. As the thickness of the film increases, the grain size increases and surface roughness decreases. |
| first_indexed | 2024-03-06T15:42:54Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48797 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:42:54Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | usm.eprints-487972021-04-08T00:52:37Z http://eprints.usm.my/48797/ Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering Yusof, Ahmad Sauffi Hassan, Zainuriah Zainal, Norzaini QC1-999 Physics Zinc oxide (ZnO) is a wide band gap semiconductor (3.3 7ev) with promising appli cations in optoelectroni c devices and flat panel display. Copper (Cu) doping changes the properti es of ZnO. Pure and Cu doped ZnO (CZO) were deposited on p-type and 11-type ga llium nitride (GaN) using radio fi·equency (RF) magnetron sputtering of Cu!ZnO alloy target with ratio I 0/90 at room temperature. The effect of different deposition thickness of the thin film on the crysta l structure, surface morphology and surface roughnesswere investigated intensively using X-ray diffraction (XRD), field em ission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) andatomic force microscopy (AFM)respectively. Results indicate th at the films with hexago nal wurtzite structure and preferential c ax is orientation were fabricated. Crystalli zation of thin film is dependent on the deposition thickness. As the thickness of the film increases, the grain size increases and surface roughness decreases. 2016-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48797/1/ZO5.pdf%20done.pdf Yusof, Ahmad Sauffi and Hassan, Zainuriah and Zainal, Norzaini (2016) Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016). |
| spellingShingle | QC1-999 Physics Yusof, Ahmad Sauffi Hassan, Zainuriah Zainal, Norzaini Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering |
| title | Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering |
| title_full | Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering |
| title_fullStr | Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering |
| title_full_unstemmed | Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering |
| title_short | Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering |
| title_sort | fabrication and characterization of copper doped zinc oxide on p type and ntype gallium nitride by sputtering |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48797/1/ZO5.pdf%20done.pdf |
| work_keys_str_mv | AT yusofahmadsauffi fabricationandcharacterizationofcopperdopedzincoxideonptypeandntypegalliumnitridebysputtering AT hassanzainuriah fabricationandcharacterizationofcopperdopedzincoxideonptypeandntypegalliumnitridebysputtering AT zainalnorzaini fabricationandcharacterizationofcopperdopedzincoxideonptypeandntypegalliumnitridebysputtering |