Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48870/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20146.pdf |
| _version_ | 1797012087232266240 |
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| author | Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ooi, Mahayatun Dayana Johan Ahmed, Naser M. |
| author_facet | Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ooi, Mahayatun Dayana Johan Ahmed, Naser M. |
| author_sort | Mahmood, Ainorkhilah |
| collection | USM |
| description | In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH) used in common dc constant current electrochemical etching process. Ultra-violet (UV) illumination is used to assist in the generation of electron-hole pairs, where etching proceeds through the oxidation and consequently, dissolution of the semiconductor surface. The ac formed porous Si-doped GaN with excellent structural and optical properties. According to the FESEM micrographs, the GaN thin films exhibit a homogeneous nanoporous structures with spatial nano-flakes arrangement. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. Electrical characterizations of the MSM photodiodes were carried out by using current-voltage (I-V) measurements indicated that the devices were highly sensitive to ambient light. |
| first_indexed | 2024-03-06T15:43:07Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48870 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:43:07Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | usm.eprints-488702021-04-13T06:45:53Z http://eprints.usm.my/48870/ Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ooi, Mahayatun Dayana Johan Ahmed, Naser M. QC1-999 Physics In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH) used in common dc constant current electrochemical etching process. Ultra-violet (UV) illumination is used to assist in the generation of electron-hole pairs, where etching proceeds through the oxidation and consequently, dissolution of the semiconductor surface. The ac formed porous Si-doped GaN with excellent structural and optical properties. According to the FESEM micrographs, the GaN thin films exhibit a homogeneous nanoporous structures with spatial nano-flakes arrangement. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. Electrical characterizations of the MSM photodiodes were carried out by using current-voltage (I-V) measurements indicated that the devices were highly sensitive to ambient light. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48870/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20146.pdf Mahmood, Ainorkhilah and Hassan, Zainuriah and Rahim, Alhan Farhanah Abd and Radzali, Rosfariza and Ooi, Mahayatun Dayana Johan and Ahmed, Naser M. (2019) Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ooi, Mahayatun Dayana Johan Ahmed, Naser M. Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec |
| title | Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec |
| title_full | Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec |
| title_fullStr | Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec |
| title_full_unstemmed | Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec |
| title_short | Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec |
| title_sort | enhancing performance of porous si doped gan based msm photodetector using 50 hz acpec |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48870/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20146.pdf |
| work_keys_str_mv | AT mahmoodainorkhilah enhancingperformanceofporoussidopedganbasedmsmphotodetectorusing50hzacpec AT hassanzainuriah enhancingperformanceofporoussidopedganbasedmsmphotodetectorusing50hzacpec AT rahimalhanfarhanahabd enhancingperformanceofporoussidopedganbasedmsmphotodetectorusing50hzacpec AT radzalirosfariza enhancingperformanceofporoussidopedganbasedmsmphotodetectorusing50hzacpec AT ooimahayatundayanajohan enhancingperformanceofporoussidopedganbasedmsmphotodetectorusing50hzacpec AT ahmednaserm enhancingperformanceofporoussidopedganbasedmsmphotodetectorusing50hzacpec |