Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48870/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20146.pdf |