Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique
Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 minutes. The aim of this work is to study pore formation on the Si an...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Online Access: | http://eprints.usm.my/48904/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2098.pdf |
| _version_ | 1797012093356998656 |
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| author | Sohimee, S. N. Hassan, Z. Ahmed, Naser M. Radzali, R. Quah, H. J. Lim, W. F. |
| author_facet | Sohimee, S. N. Hassan, Z. Ahmed, Naser M. Radzali, R. Quah, H. J. Lim, W. F. |
| author_sort | Sohimee, S. N. |
| collection | USM |
| description | Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 minutes. The aim of this work is to study pore formation on the Si and p-GaN substrates in the aspects of morphological and structural changes. The morphological and structural properties of porous Si and porous p-type GaN samples have been studied using field emission scanning electron microscopy (FESEM) measurement, energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and high-resolution X-ray diffraction (HR-XRD) in comparison to the respective as-grown sample. FESEM analysis revealed that uniform pore size with triangular-like shape was formed in porous Si sample while circular-like shape pores were formed in the porous p-type GaN sample. AFM measurement revealed that the root-meansquare surface roughness of porous Si and porous p-GaN was 6.15 nm and 5.90 nm, respectively. Detailed investigation will be presented in this work to show that ACPEC etching technique is a viable technique to produce porous nanostructures in different substrates. |
| first_indexed | 2024-03-06T15:43:12Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48904 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:43:12Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | usm.eprints-489042021-04-15T07:13:33Z http://eprints.usm.my/48904/ Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique Sohimee, S. N. Hassan, Z. Ahmed, Naser M. Radzali, R. Quah, H. J. Lim, W. F. QC1-999 Physics Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 minutes. The aim of this work is to study pore formation on the Si and p-GaN substrates in the aspects of morphological and structural changes. The morphological and structural properties of porous Si and porous p-type GaN samples have been studied using field emission scanning electron microscopy (FESEM) measurement, energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and high-resolution X-ray diffraction (HR-XRD) in comparison to the respective as-grown sample. FESEM analysis revealed that uniform pore size with triangular-like shape was formed in porous Si sample while circular-like shape pores were formed in the porous p-type GaN sample. AFM measurement revealed that the root-meansquare surface roughness of porous Si and porous p-GaN was 6.15 nm and 5.90 nm, respectively. Detailed investigation will be presented in this work to show that ACPEC etching technique is a viable technique to produce porous nanostructures in different substrates. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48904/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2098.pdf Sohimee, S. N. and Hassan, Z. and Ahmed, Naser M. and Radzali, R. and Quah, H. J. and Lim, W. F. (2019) Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Sohimee, S. N. Hassan, Z. Ahmed, Naser M. Radzali, R. Quah, H. J. Lim, W. F. Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique |
| title | Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique |
| title_full | Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique |
| title_fullStr | Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique |
| title_full_unstemmed | Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique |
| title_short | Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique |
| title_sort | comparative studies between porous silicon and porous p type gallium nitride prepared using alternating current photo assisted electrochemical etching technique |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48904/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2098.pdf |
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