Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optica...
| Main Authors: | , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/48919/1/MNRG_MA01.pdf |
| _version_ | 1797012096261554176 |
|---|---|
| author | Asri, R. I. M. Hamzah, N. A. |
| author_facet | Asri, R. I. M. Hamzah, N. A. |
| author_sort | Asri, R. I. M. |
| collection | USM |
| description | InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis, decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence (PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices. |
| first_indexed | 2024-03-06T15:43:15Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48919 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:43:15Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | usm.eprints-489192021-04-19T02:24:36Z http://eprints.usm.my/48919/ Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes Asri, R. I. M. Hamzah, N. A. QC1-999 Physics InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis, decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence (PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48919/1/MNRG_MA01.pdf Asri, R. I. M. and Hamzah, N. A. (2020) Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020). |
| spellingShingle | QC1-999 Physics Asri, R. I. M. Hamzah, N. A. Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_full | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_fullStr | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_full_unstemmed | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_short | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_sort | influence of growth temperature of pgan layer on the characteristics of ingan gan blue light emitting diodes |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48919/1/MNRG_MA01.pdf |
| work_keys_str_mv | AT asririm influenceofgrowthtemperatureofpganlayeronthecharacteristicsofinganganbluelightemittingdiodes AT hamzahna influenceofgrowthtemperatureofpganlayeronthecharacteristicsofinganganbluelightemittingdiodes |