Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure
In the present work, InGaN quantum well (QW) and undoped GaN layer were grown on a flat sapphire substrate (FSS) with different growth temperatures using Metal Organic Chemical Vapor Phase Deposition (MOCVD) to investigate the effects of growth temperature towards indium (In) composition and perform...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48967/1/MNRG_ZH07.pdf |
| _version_ | 1797012108002459648 |
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| author | Seliman, Muhd Azi Che Hassan, Zainuriah Yusof, Ahmad Sauffi Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Baharin, Mohd Syamsul Nasyriq Samsol |
| author_facet | Seliman, Muhd Azi Che Hassan, Zainuriah Yusof, Ahmad Sauffi Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Baharin, Mohd Syamsul Nasyriq Samsol |
| author_sort | Seliman, Muhd Azi Che |
| collection | USM |
| description | In the present work, InGaN quantum well (QW) and undoped GaN layer were grown on a flat sapphire substrate (FSS) with different growth temperatures using Metal Organic Chemical Vapor Phase Deposition (MOCVD) to investigate the effects of growth temperature towards indium (In) composition and performance of the heterostructure. According to photoluminescence (PL) measurement, within growth temperature of 750 °C to 850 °C, the range of emission wavelength achieved was 386 nm to 476 nm. While higher growth temperature led to shorter emission wavelength, In composition in the active region was affected as well due to decomposition of In at high temperature. Using quantitative phase analysis of High Resolution X-Ray Diffraction System (HRXRD), measurement of In composition was conducted to further study the structural properties of the structure and conclude the optimization of InGaN QW layer. |
| first_indexed | 2024-03-06T15:43:23Z |
| format | Conference or Workshop Item |
| id | usm.eprints-48967 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:43:23Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | usm.eprints-489672021-04-21T02:18:33Z http://eprints.usm.my/48967/ Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure Seliman, Muhd Azi Che Hassan, Zainuriah Yusof, Ahmad Sauffi Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Baharin, Mohd Syamsul Nasyriq Samsol QC1-999 Physics In the present work, InGaN quantum well (QW) and undoped GaN layer were grown on a flat sapphire substrate (FSS) with different growth temperatures using Metal Organic Chemical Vapor Phase Deposition (MOCVD) to investigate the effects of growth temperature towards indium (In) composition and performance of the heterostructure. According to photoluminescence (PL) measurement, within growth temperature of 750 °C to 850 °C, the range of emission wavelength achieved was 386 nm to 476 nm. While higher growth temperature led to shorter emission wavelength, In composition in the active region was affected as well due to decomposition of In at high temperature. Using quantitative phase analysis of High Resolution X-Ray Diffraction System (HRXRD), measurement of In composition was conducted to further study the structural properties of the structure and conclude the optimization of InGaN QW layer. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48967/1/MNRG_ZH07.pdf Seliman, Muhd Azi Che and Hassan, Zainuriah and Yusof, Ahmad Sauffi and Ahmad, Mohd Anas and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd and Baharin, Mohd Syamsul Nasyriq Samsol (2020) Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020). |
| spellingShingle | QC1-999 Physics Seliman, Muhd Azi Che Hassan, Zainuriah Yusof, Ahmad Sauffi Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Baharin, Mohd Syamsul Nasyriq Samsol Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure |
| title | Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure |
| title_full | Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure |
| title_fullStr | Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure |
| title_full_unstemmed | Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure |
| title_short | Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure |
| title_sort | effects of different growth temperatures towards indium composition and performance of ingan quantum well heterostructure |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48967/1/MNRG_ZH07.pdf |
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