Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
The cerium thin films were deposited on n-type Si (100) substrate by direct current (DC) sputtering followed by post-annealing at different temperature (400ᵒC and 600ᵒC, 800ᵒC, 1000ᵒC) in an oxygen ambient. In this study, the effect of annealing temperature on the crystallized CeO2 thin films was c...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/49082/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2069.pdf |
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Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By Dc Sputtering Method
Published 2020
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Conference or Workshop Item