Synthesis And Characterization Of Indium And Gallium Based Nanowires
In this work, formation of In- and Ga- based nanowires was studied using chemical vapor deposition (CVD) method. The starting materials were In, Ga and ammonia gas (NH3) with gold as catalyst for the growth of nanowire on sapphire substrates. The samples were characterized by scanning electron micro...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2017
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| Online Access: | http://eprints.usm.my/52799/1/Synthesis%20And%20Characterization%20Of%20Indium%20And%20Gallium%20Based%20Nanowires_Asma%20Amira%20Badrol%20Hisham_B1_2017.pdf |
| _version_ | 1797012886353084416 |
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| author | Hisham, Asma Amira Badrol |
| author_facet | Hisham, Asma Amira Badrol |
| author_sort | Hisham, Asma Amira Badrol |
| collection | USM |
| description | In this work, formation of In- and Ga- based nanowires was studied using chemical vapor deposition (CVD) method. The starting materials were In, Ga and ammonia gas (NH3) with gold as catalyst for the growth of nanowire on sapphire substrates. The samples were characterized by scanning electron microscopy equipped with energy dispersive X-ray spectroscopy, transmission electron microscopy, X-ray diffractometer and Raman Spectroscopy. Influence of growth parameters involved in CVD growth nanowires on morphology and structural of In- and Ga- based nanowires is presented. Growth parameters such as growth temperature (600°C, 700°C, 800°C and 850°C), growth time (30 mins, 50 mins, 70 mins and 90 mins), deposition time of gold thin film (1 second, 2 seconds and 3 seconds), different gold structure coating (gold nanoparticles and gold thin films) and ratio of metal sources (30:70, 40:60, 50:50, 60:40 and 70:30), In to Ga effected the structural and morphological of the formed nanowires. It is found that suitable temperature and time to grow the nanowires was at 700°C for 30 minutes. With 3 seconds deposited gold thin film, the formed nanowires appeared to have a rounded tip and helical structure of nanowire coils around an axis with a good distribution growth on the substrate surface. It is also found that different amount of In and Ga have an effect on the length of the formed nanowires. Samples synthesized with a higher amount of In formed a longer nanowires and sample synthesized with a higher amount of Ga formed a shorter nanowires. |
| first_indexed | 2024-03-06T15:54:16Z |
| format | Monograph |
| id | usm.eprints-52799 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T15:54:16Z |
| publishDate | 2017 |
| publisher | Universiti Sains Malaysia |
| record_format | dspace |
| spelling | usm.eprints-527992022-06-08T07:21:54Z http://eprints.usm.my/52799/ Synthesis And Characterization Of Indium And Gallium Based Nanowires Hisham, Asma Amira Badrol T Technology TA401-492 Materials of engineering and construction. Mechanics of materials In this work, formation of In- and Ga- based nanowires was studied using chemical vapor deposition (CVD) method. The starting materials were In, Ga and ammonia gas (NH3) with gold as catalyst for the growth of nanowire on sapphire substrates. The samples were characterized by scanning electron microscopy equipped with energy dispersive X-ray spectroscopy, transmission electron microscopy, X-ray diffractometer and Raman Spectroscopy. Influence of growth parameters involved in CVD growth nanowires on morphology and structural of In- and Ga- based nanowires is presented. Growth parameters such as growth temperature (600°C, 700°C, 800°C and 850°C), growth time (30 mins, 50 mins, 70 mins and 90 mins), deposition time of gold thin film (1 second, 2 seconds and 3 seconds), different gold structure coating (gold nanoparticles and gold thin films) and ratio of metal sources (30:70, 40:60, 50:50, 60:40 and 70:30), In to Ga effected the structural and morphological of the formed nanowires. It is found that suitable temperature and time to grow the nanowires was at 700°C for 30 minutes. With 3 seconds deposited gold thin film, the formed nanowires appeared to have a rounded tip and helical structure of nanowire coils around an axis with a good distribution growth on the substrate surface. It is also found that different amount of In and Ga have an effect on the length of the formed nanowires. Samples synthesized with a higher amount of In formed a longer nanowires and sample synthesized with a higher amount of Ga formed a shorter nanowires. Universiti Sains Malaysia 2017-06-01 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/52799/1/Synthesis%20And%20Characterization%20Of%20Indium%20And%20Gallium%20Based%20Nanowires_Asma%20Amira%20Badrol%20Hisham_B1_2017.pdf Hisham, Asma Amira Badrol (2017) Synthesis And Characterization Of Indium And Gallium Based Nanowires. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Bahan Sumber Mineral. (Submitted) |
| spellingShingle | T Technology TA401-492 Materials of engineering and construction. Mechanics of materials Hisham, Asma Amira Badrol Synthesis And Characterization Of Indium And Gallium Based Nanowires |
| title | Synthesis And Characterization Of Indium And Gallium Based Nanowires |
| title_full | Synthesis And Characterization Of Indium And Gallium Based Nanowires |
| title_fullStr | Synthesis And Characterization Of Indium And Gallium Based Nanowires |
| title_full_unstemmed | Synthesis And Characterization Of Indium And Gallium Based Nanowires |
| title_short | Synthesis And Characterization Of Indium And Gallium Based Nanowires |
| title_sort | synthesis and characterization of indium and gallium based nanowires |
| topic | T Technology TA401-492 Materials of engineering and construction. Mechanics of materials |
| url | http://eprints.usm.my/52799/1/Synthesis%20And%20Characterization%20Of%20Indium%20And%20Gallium%20Based%20Nanowires_Asma%20Amira%20Badrol%20Hisham_B1_2017.pdf |
| work_keys_str_mv | AT hishamasmaamirabadrol synthesisandcharacterizationofindiumandgalliumbasednanowires |