Analog Structural Modeling Of Resonant Tunneling Diode Using Ltspice
In this research, the material InGaAs/AlAs and GaAs/AlAs are used as the material for the double barriers resonant tunneling diode (RTD). RTD is the fastest electronic device to date. RTD consists of a quantum well sandwiched in between two thin barriers InGaAs/AlAs and GaAs/AlAs. Both ends are term...
| প্রধান লেখক: | |
|---|---|
| বিন্যাস: | Monograph |
| ভাষা: | English |
| প্রকাশিত: |
Universiti Sains Malaysia
2017
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://eprints.usm.my/52879/1/Analog%20Structural%20Modeling%20Of%20Resonant%20Tunneling%20Diode%20Using%20Ltspice_Wan%20Nurnabilah%20Zaharimying_E3_2017.pdf |