Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon

This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct curre...

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Main Author: Shamsuddin, Siti Nur Atikah
Format: Thesis
Language:English
Published: 2019
Subjects:
Online Access:http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf
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author Shamsuddin, Siti Nur Atikah
author_facet Shamsuddin, Siti Nur Atikah
author_sort Shamsuddin, Siti Nur Atikah
collection USM
description This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct current (DC) and pulsed current (PC) electrochemical etching techniques. The result showed that PC etching technique produced higher porosity and more uniform PSi substrate compared to than DC etching technique. In the second step, GaN layer was grown on PSi substrate by ECD technique. The quality of GaN was improved by nitridation process. Several peaks of hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which corresponding to the (010), (002), and (101) orientations, respectively
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spelling usm.eprints-556142022-11-11T01:12:32Z http://eprints.usm.my/55614/ Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon Shamsuddin, Siti Nur Atikah QC1 Physics (General) This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct current (DC) and pulsed current (PC) electrochemical etching techniques. The result showed that PC etching technique produced higher porosity and more uniform PSi substrate compared to than DC etching technique. In the second step, GaN layer was grown on PSi substrate by ECD technique. The quality of GaN was improved by nitridation process. Several peaks of hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which corresponding to the (010), (002), and (101) orientations, respectively 2019-11 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf Shamsuddin, Siti Nur Atikah (2019) Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon. Masters thesis, Universiti Sains Malaysia.
spellingShingle QC1 Physics (General)
Shamsuddin, Siti Nur Atikah
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_full Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_fullStr Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_full_unstemmed Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_short Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_sort electrochemical and radio frequency sputtering growth of gan nanostructures on porous silicon
topic QC1 Physics (General)
url http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf
work_keys_str_mv AT shamsuddinsitinuratikah electrochemicalandradiofrequencysputteringgrowthofgannanostructuresonporoussilicon