Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System
This report included design, analysis and implementation of high frequency balanced amplifier operate at center frequency of 1.9 GHz. System and circuit design are carried out with the aid of a powerful design tool - Agilent’s Advanced Design System (ADS 2003A). Balanced amplifier is a type of...
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| 格式: | Monograph |
| 语言: | English |
| 出版: |
Universiti Sains Malaysia
2005
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| 在线阅读: | http://eprints.usm.my/57604/1/Design%20And%20Tradeoff%20Characterizations%20Of%20High%20Frequency%20Balanced%20Amplifier%20For%20RF%20Integrated%20System_Tai%20Wen%20Qi.pdf |
| _version_ | 1825907725364625408 |
|---|---|
| author | Tai, Wen Qi |
| author_facet | Tai, Wen Qi |
| author_sort | Tai, Wen Qi |
| collection | USM |
| description | This report included design, analysis and implementation of high frequency
balanced amplifier operate at center frequency of 1.9 GHz. System and circuit design
are carried out with the aid of a powerful design tool - Agilent’s Advanced Design
System (ADS 2003A). Balanced amplifier is a type of amplifier that combines 2 similar
single-ended amplifiers into single unit, which can perform amplification of input RF
signal. There are two common types of single-ended amplifier: amplifier with lumped
element and microstrip matching network. In this project, both types of amplifier are
designed and built. Analysis and comparison carried out on this two different topology
are included in this report. Initial design using ideal component provided the basic
structure and complete circuit of the amplifiers. In the beginning stage, the design steps
included mathematical calculations and analysis. Detailed design steps with replaced
actual model are carried out after the structure of circuits are obtained. Different types
of simulation using ADS are done to observe performances of the balanced amplifiers.
Using features of ADS, the values of design are optimized to obtain required
performances. Result of simulations are included in this report. The balanced amplifier
design are implemented in both software and hardware. Circuit’s layout design using
ADS’s features is part of hardware implementations. The amplifier circuits are built on
printed circuit board (PCB). The hardwares built are tested with network and spectrum
analyzer in to obtain required characteristics and specifications. Measurements taken
from hardware test are compared to results from simulations. Variations that existed
from both results are discussed in this report. |
| first_indexed | 2024-03-06T16:08:27Z |
| format | Monograph |
| id | usm.eprints-57604 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T16:08:27Z |
| publishDate | 2005 |
| publisher | Universiti Sains Malaysia |
| record_format | dspace |
| spelling | usm.eprints-576042023-03-28T09:21:17Z http://eprints.usm.my/57604/ Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System Tai, Wen Qi T Technology TK Electrical Engineering. Electronics. Nuclear Engineering This report included design, analysis and implementation of high frequency balanced amplifier operate at center frequency of 1.9 GHz. System and circuit design are carried out with the aid of a powerful design tool - Agilent’s Advanced Design System (ADS 2003A). Balanced amplifier is a type of amplifier that combines 2 similar single-ended amplifiers into single unit, which can perform amplification of input RF signal. There are two common types of single-ended amplifier: amplifier with lumped element and microstrip matching network. In this project, both types of amplifier are designed and built. Analysis and comparison carried out on this two different topology are included in this report. Initial design using ideal component provided the basic structure and complete circuit of the amplifiers. In the beginning stage, the design steps included mathematical calculations and analysis. Detailed design steps with replaced actual model are carried out after the structure of circuits are obtained. Different types of simulation using ADS are done to observe performances of the balanced amplifiers. Using features of ADS, the values of design are optimized to obtain required performances. Result of simulations are included in this report. The balanced amplifier design are implemented in both software and hardware. Circuit’s layout design using ADS’s features is part of hardware implementations. The amplifier circuits are built on printed circuit board (PCB). The hardwares built are tested with network and spectrum analyzer in to obtain required characteristics and specifications. Measurements taken from hardware test are compared to results from simulations. Variations that existed from both results are discussed in this report. Universiti Sains Malaysia 2005-03-01 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/57604/1/Design%20And%20Tradeoff%20Characterizations%20Of%20High%20Frequency%20Balanced%20Amplifier%20For%20RF%20Integrated%20System_Tai%20Wen%20Qi.pdf Tai, Wen Qi (2005) Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Elektrik dan Elektronik. (Submitted) |
| spellingShingle | T Technology TK Electrical Engineering. Electronics. Nuclear Engineering Tai, Wen Qi Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System |
| title | Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System |
| title_full | Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System |
| title_fullStr | Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System |
| title_full_unstemmed | Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System |
| title_short | Design And Tradeoff Characterizations Of High Frequency Balanced Amplifier For RF Integrated System |
| title_sort | design and tradeoff characterizations of high frequency balanced amplifier for rf integrated system |
| topic | T Technology TK Electrical Engineering. Electronics. Nuclear Engineering |
| url | http://eprints.usm.my/57604/1/Design%20And%20Tradeoff%20Characterizations%20Of%20High%20Frequency%20Balanced%20Amplifier%20For%20RF%20Integrated%20System_Tai%20Wen%20Qi.pdf |
| work_keys_str_mv | AT taiwenqi designandtradeoffcharacterizationsofhighfrequencybalancedamplifierforrfintegratedsystem |